UDC 621.382.2

Electric parametres of SiC p–i–n-diodes
in the 77—773 K temperature range

Basanets V. V., Belyaev A. E., Boltovets N. S.,
Konakova R. V., Krivutsa V. A., Kudrik Ya. Ya., Lychman K. A.

The experimental results of investigation of the principal parameters and characteristics of silicon carbide p–i–n-diodes in the 77—773 K temperature range are presented. The functionality of p–i–n-diode included into a strip modulator at temperature below +500°C is demonstrated.

Ukraine, Kiev, RI «Orion», V. Ye. Lashkariov Institute of Physics of Semiconductors of NASU.