UDC 621.375.5:621.382.2

Pulse power single-diode microwave oscillator based
on Ka-band silicon IMPATT diodes

Tarasyuk V. M., Basanets V. V., Boltovets M. S., Zorenko O. V., Kolisnyk M. V.

The test results of prototype of Ka-band silicon double-drift power IMPATT diodes are presented. These diodes are intended for making IMPATT oscillators with pulse power more than 35 W at 300 ns pulse width.

Ukraine, Kiev, RI «Orion».