Investigation of local electrophysical properties of electrically active defects in silicon-based solar cells

Abstract

The results of investigation of electrically active defects on the solar cell surface are presented. Defects are characterized by high local conductivity of p–n-junctions and visible light emission. Electrical, physical and chemical properties of defects have been studied. Increased local concentration of aluminium in the defect regions was revealed. High density of defects has been determined at the edges of solar cell wafers. Possibility of solar cells quality control by registration of light emissive defect concentration during technological processes has been shown.