Anomalous photovoltaic effect in a structure with a Schottky–Mott Barrier

  • A. V. Karimov Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • D. M. Yodgorova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • R. A. Saidova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • F. A. Giyasova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

Abstract

The paper presents the results of a study of a photovoltaic effect observed at room temperature, which is accompanied by a change in the sign of the photocurrent when transitioning from the region of intrinsic absorption to the impurity region within the spectral range of 0.4–2 μm in an oxygen‑doped double‑base Ag–N0AlGaAs–n+GaAs–n0GaInAs–Au structure. Such structures are of interest for fiber‑optic systems.

Published
2008-02-28
How to Cite
Karimov, A. V., Yodgorova, D. M., Saidova, R. A., & Giyasova, F. A. (2008). Anomalous photovoltaic effect in a structure with a Schottky–Mott Barrier. Technology and Design in Electronic Equipment, (1), 27-30. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.1.27
Issue
No. 1 (2008): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2008 Karimov A. V., Yodgorova D. M., Saidova R. A., Giyasova F. A.

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