Temperature dependence of resistance in metallic quantum wires

  • I. A. Obukhov “Interface‑MFG”, Moscow, Russia
Keywords: quantum wire, conducting channel, resistance, temperature, electron injection

Abstract

An explanation is given for the experimentally observed changes in the temperature dependence of resistance in metallic quantum wires when their transverse size is varied. The unusual behavior of resistance can be explained by taking into account the injection of electrons from the contact regions into the conducting channel of the quantum wire.

Published
2007-02-28
How to Cite
Obukhov, I. A. (2007). Temperature dependence of resistance in metallic quantum wires. Technology and Design in Electronic Equipment, (1), 36-39. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.1.36
Issue
No. 1 (2007): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2007 Obukhov I. A.

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