Modeling the energy dependence of sensitivity of CdTe (CdZnTe) gamma radiation detectors

  • A. A. Zakharchenko National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • D. V. Nakonechny National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • I. N. Shlyakhov National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • A. V. Rybka National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • V. E. Kutny National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • M. A. Khazhmuradov National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
Keywords: radiation dose, semiconductor detectors, detection sensitivity, CdTe, CdZnTe, dosimetry, Monte Carlo method

Abstract

When using detectors based on the semiconductor compounds CdTe (CdZnTe) in dosimetric instruments operating over a wide range of gamma‑radiation energies, it is necessary to correct the dependence of detector sensitivity on energy. By means of mathematical modeling, a method of correcting the energy dependence of sensitivity using metallic filters has been investigated. A method for determining radiation dose is substantiated, based on the linear relationship between dose and the average amplitude of detector pulses.

Published
2007-02-28
How to Cite
Zakharchenko, A. A., Nakonechny, D. V., Shlyakhov, I. N., Rybka, A. V., Kutny, V. E., & Khazhmuradov, M. A. (2007). Modeling the energy dependence of sensitivity of CdTe (CdZnTe) gamma radiation detectors. Technology and Design in Electronic Equipment, (1), 28-31. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.1.28
Issue
No. 1 (2007): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2007 Zakharchenko A. A., Nakonechny D. V., Shlyakhov I. N., A. V. Rybka, Kutny V. E., Khazhmuradov M. A.

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