Diode temperature sensor: analysis of measurement error

  • A. N. Ivashchenko V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • Yu. M. Shwarts V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • М. M. Shwarts V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
Keywords: temperature, silicon diode, measurement, accuracy

Abstract

Based on the results of studies of the electrical and thermometric characteristics of the developed silicon diode temperature sensors and the analysis of errors caused by the influence of the current source and voltage meter, requirements have been determined for equipment that ensures measurement accuracy at the level of hundredths of a Kelvin degree. An automated system has been created for the metrological certification of diode temperature sensors in the range of 4.2–373 K.

Published
2005-12-30
How to Cite
Ivashchenko, A. N., Shwarts, Y. M., & ShwartsМ. M. (2005). Diode temperature sensor: analysis of measurement error. Technology and Design in Electronic Equipment, (6), 27-29. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.6.27
Issue
No. 6 (2005): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2005 Ivashchenko A. N., Shwarts Yu. M., Shwarts M. M.

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This work is licensed under a Creative Commons Attribution 4.0 International License.