Universal control scheme for powerful high-voltage MOS inverters eliminating the thyristor effect

  • G. I. Gavrilyuk Research Institute «Helium», Vinnytsia, Ukraine
  • T. V. Maevskaya Research and Development Center of Radio Electronics «Polyus», Vinnytsia, Ukraine
  • V. V. Chechel Research and Development Center of Radio Electronics «Polyus», Vinnytsia, Ukraine
  • N. N. Sharan Research Institute «Helium», Vinnytsia, Ukraine
Keywords: thyristor effect, Miller capacitance, powerful high-frequency voltage inverter, MOSFET transistor control circuit, pulse power supply

Abstract

The proposed approach to designing powerful high-frequency voltage inverters makes it possible to improve their operational reliability while expanding the limits of supply voltages and conversion frequencies. A prototype device was manufactured according to the presented functional block diagram, confirming the correctness of the technical solution.

Published
2005-12-30
How to Cite
Gavrilyuk, G. I., Maevskaya, T. V., Chechel, V. V., & Sharan, N. N. (2005). Universal control scheme for powerful high-voltage MOS inverters eliminating the thyristor effect. Technology and Design in Electronic Equipment, (6), 16-19. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.6.16
Issue
No. 6 (2005): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2005 Gavrilyuk G. I., Maevskaya T. V., Chechel V. V., Sharan N. N.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.