Influence of gamma irradiation on the photoelectric parameters of InSe heterostructures

  • Z. D. Kovalyuk I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
  • V. N. Katerinchuk I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
  • O. A. Politanskaya I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
  • O. N. Sidor I. M. Frantsevich Institute for problems of materials science of NAS of Ukraine, Chernivtsi department, Ukraine
Keywords: gamma irradiation, photodiode, p‑n‑InSe, oxide‑p‑InSe

Abstract

The influence of γ‑irradiation (60Co) on the photoelectric parameters of InSe diodes has been investigated. Irradiation at doses of 10–300 R leads to an increase in the values of the current rectification coefficient, open‑circuit voltage, and short‑circuit current, while practically not affecting the spectral distribution of the photoresponse. No destructive effect on the p‑n junction boundary was observed. It is shown that p‑n‑InSe and oxide‑p‑InSe photodiodes can be operated under conditions of elevated radiation background.

Published
2005-10-30
How to Cite
Kovalyuk, Z. D., Katerinchuk, V. N., Politanskaya, O. A., & Sidor, O. N. (2005). Influence of gamma irradiation on the photoelectric parameters of InSe heterostructures. Technology and Design in Electronic Equipment, (5), 47-48. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.5.47
Issue
No. 5 (2005): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2005 Kovalyuk Z. D., Katerinchuk V. N., Politanskaya O. A., Sidor O. N.

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