Selection of semiconductor materials for gamma-ray detectors

  • A. S. Abyzov National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • V. M. Azhazha National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • L. N. Davydov National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • G. P. Kovtun National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • V. E. Kutny National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • A. V. Rybka National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
Keywords: detector, γ-radiation, semiconductor compounds, bandgap width, mobility, lifetime, atomic number, resistivity, periodic table of elements

Abstract

Among the semiconductors used in spectrometers and dosimeters, wide-bandgap compounds such asCd1-xZnxTe, CdTe, and HgI2 occupy leading positions. The question arises as to whether this choice is definitive and optimal. In an attempt to answer this question, physical parameters critical to the detector’s sensitivity were selected. These include, first and foremost, mobility, lifetime, atomic number, and resistivity. Based on the selected parameters, an analysis of binary compounds with a tetrahedral structure was conducted.

Published
2004-06-30
How to Cite
Abyzov, A. S., Azhazha, V. M., Davydov, L. N., Kovtun, G. P., Kutny, V. E., & Rybka, A. V. (2004). Selection of semiconductor materials for gamma-ray detectors. Technology and Design in Electronic Equipment, (3), 3-6. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.3.03