No. 5 (2011): Tekhnologiya i konstruirovanie v elektronnoi apparature

Articles

• Application of the technology of thin films and nanostructured materials in the manufacture of thermally loaded printed circuit boards

  E. A. Sakhno, M. A. Balashov, V. V. Zhilikov, D. V. Lobasov

  3-5

  • PDF (Українська)
• Thermal vacuum testing of the power supply system of the nanosatellite NTUU "KPI"

  B. M. Rassamakin, S. M. Khairnasov, V. I. Khominich, A. V. Budionnyi, E. Yu. Kovalenko, Ye. N. Eliseyev

  6-10

  • PDF (Українська)
• Low-dimensional silicon crystals for photovoltaic cells

  A. A. Druzhinin, I. P. Ostrovskii, Yu. N. Khoverko, S. I. Nichkalo, Ye. I. Berezhanskii

  11-13

  • PDF (Українська)
• Formation of delta-doped p-layer of hydrogen in natural and CVD-diamond crystals

  A. A. Altukhov, M. S. Afanas’ev, K. N. Zyabliuk, A. Yu. Mityagin, N. H. Talipov, G. V. Chucheva

  14-16

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• Integrated double-sided silicon microstrip detectors

  V. L. Perevertailo

  17-24

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• Technique and installation for determination of semiconductors heat conduction with the use of radiant energy

  M. A. Gurbanniyazov, M. A. Kurbanov

  25-26

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• Fine structure of laser spectrum at electron-beam pumping based on radiation-modified optically homogeneous crystals of undoped GaAs

  A. S. Garkavenko

  27-30

  • PDF (Українська)
• Interlayer surface impurity nanocomposites of (0001) crystal Bi2Te3, alloyed with zinc and selenium

  A. P. Alieva, F. K. Aleskerov, S. Sh. Kahramanov

  31-34

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• Investigation of photoluminescence spectrums of InSb low-dimensional structures formed in GaSb matrix

  E. V. Andronova, Ye. A. Baganov, V. V. Kurak

  35-38

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• Influence of polycrystalline silicon layer on flow through «metal — p-Si» contact

  V. A. Smyntyna, О. А. Kulinich, I. R. Yatsunskii, O. V. Sviridova, I. A. Marchuk

  39-41

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• Autodyne characteristics of stabilized UHF-oscillators at a strong reflected signal

  V. Ya. Noskov, K. A. Ignatkov, S. M. Smolskii

  42-54

  • PDF (Українська)