Deposition kinetics of in-situ oxygen doped polysilicon film

  • O. Yu. Nalivaiko JSC INTEGRAL, Minsk, Belarus
  • A. S. Тurtsevich JSC INTEGRAL, Minsk, Belarus
Keywords: polysilicon, adsorptive-kinetic model, film deposition

Abstract

The influence of deposition conditions on composition of in-situ oxygen doped polysilicon films has been investigated. A kinetic model of adsorption-deposition process using concentrated silane and nitrous oxide has been developed. The range of optimal ratios of silane and nitrous oxide flows and deposition temperature, which provide the acceptable deposition rate, thickness uniformity, controllability of oxygen content in films and conformal deposition, have been determined.

Published
2012-02-28
How to Cite
Nalivaiko, O. Y., & ТurtsevichA. S. (2012). Deposition kinetics of in-situ oxygen doped polysilicon film. Technology and Design in Electronic Equipment, (2), 37-41. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.2.37
Issue
No. 2 (2012): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2012 Nalivaiko O. Yu., Turtsevich A. S.

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This work is licensed under a Creative Commons Attribution 4.0 International License.