Determination of radiation resistance of integrated circuits with the use of low-energy X-radiation

  • V. L. Perevertailo SE "RI of Microdevices", STS "Institute for. Single crystals" NASU, Kyiv, Ukraine
Keywords: radiation testing, low-energy X-rays, MOS structure, radiation hardness of IC

Abstract

A method is proposed for determination of radiation dose via the ionization current in the p–n-junction and of radiation resistance of MIS integrated circuits with the use of low-energy (10–40 keV) X-rays.

Published
2012-02-28
How to Cite
Perevertailo, V. L. (2012). Determination of radiation resistance of integrated circuits with the use of low-energy X-radiation. Technology and Design in Electronic Equipment, (1), 30-34. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2012.1.30
Issue
No. 1 (2012): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2012 Перевертайло В. Л.

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