Producing of pover GaAs structures of bipolar and field-effect transistor by CVD-method

Abstract

Investigation results in technology of doping Sn and Bi of perfect GaAs structures preparation by the lowe-temperature isothermal chloride epitaxy method are presented. A complex problem has been solved to obtain planar layers of the n⁺–n–n⁰–p type bipolar transistors and planar layers of the i–n⁰–n–n⁺ type Schottky field-effect transistors. Heterogenetty in the thickness less than 3% and doping level less than 5% has been achieved. This allowed to get the discrete Schottky field-effect transistors with improved operation characteristics.