The influence of low energy argon ion irradiation on generation of electrically active defects in silicon

  • V. M. Popov «Microanalitika» Center of Microdevices RI, Kyiv, Ukraine
  • Yu. M. Shustov «Microanalitika» Center of Microdevices RI, Kyiv, Ukraine
  • A. S. Klimenko «Microanalitika» Center of Microdevices RI, Kyiv, Ukraine
  • A. P. Pokanevich «Microanalitika» Center of Microdevices RI, Kyiv, Ukraine
Keywords: electrically active defects, silicon, ion irradiation, scanning electron microscopy, photosensitivity, Schottky diodes

Abstract

The article displays the results of investigation of influence of low energy (3—6 keV) argon ion etching of p-type silicon on electrically active defects (EAD) formation. The photosensitivity of Schottky diodes on etched silicon surface is increased, reaching maximum values in sites of EAD. The etching of silicon by low-energy ions was shown to be an effective tool for task — oriented modification of electrophysical properties of semiconductor surface.

Published
2009-08-30
How to Cite
Popov, V. M., Shustov, Y. M., Klimenko, A. S., & Pokanevich, A. P. (2009). The influence of low energy argon ion irradiation on generation of electrically active defects in silicon. Technology and Design in Electronic Equipment, (4), 48-51. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2009.4.48
Issue
No. 4 (2009): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2009 Popov V. M., Shustov Y. M., Klimenko A. S., Pokanevich A. P.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.