Optical chalcogenide glass coats for semiconductor sources of IR-radiation

Abstract

The article demonstrates the possibility of using the multi component chalcogenide glasses Ge(Pb)–Sb(Ga)–S(Se) as dielectric materials for optical covering of semiconductor radiating active elements which function in the spectral diapason 2,5—5,0 mkm. An effective way to put optical covering of various shapes has been developed. It is possible to narrow the diagram of direction along the radiating axis of the active elements to 15° and increase three or four times the capacity of its radiation.