Phosphorus diffusion using a solid planar source in integrated circuit manufacturing

  • B. A. Shangereeva Dagestan State Technical University, Makhachkala, Russia
Keywords: phosphorus diffusion, active region, technological regime, transistor, solid planar source, electrophysical characteristics

Abstract

The results of the development and implementation of a basic phosphorus diffusion process for the formation of the active region of a power silicon transistor are presented. It is shown that the obtained optimal technological regimes of phosphorus diffusion using a solid planar source make it possible to produce transistors with improved electrophysical characteristics.

Published
2008-02-28
How to Cite
Shangereeva, B. A. (2008). Phosphorus diffusion using a solid planar source in integrated circuit manufacturing. Technology and Design in Electronic Equipment, (1), 54-56. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.1.54
Issue
No. 1 (2008): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2008 B. A. Shangereeva

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.