Methods for removing defects arising during wet etching of polycrystalline silicon surface

  • A. E. Ivanchykou Semiconductor Devices Plant Scientific Production Association «Integral», Minsk, Belarus
  • A. М. Kisel Semiconductor Devices Plant Scientific Production Association «Integral», Minsk, Belarus
  • А. V. Medvedeva Semiconductor Devices Plant Scientific Production Association «Integral», Minsk, Belarus
  • B. I. Plebanovich Semiconductor Devices Plant Scientific Production Association «Integral», Minsk, Belarus
Keywords: semiconductor device fabrication, chemical cleaning, polysilicon surface, spot-type defects

Abstract

A model of defect formation in the form of spots on the surface of polycrystalline silicon during the processing of semiconductor wafers in an etchant based on hydrofluoric acid is considered, as well as a model of defect removal in chemical solutions. The influence of centrifuge rotation speed during drying and the relief of structures created on the wafer on the number of defects has been investigated. The possibility of defect removal by chemical treatment in peroxide–ammonia solutions (PAS), or by a sequence of chemical cleaning operations in a Caro’s mixture and PAS, as well as by SiO₂ etching, has been demonstrated.

Published
2008-02-28
How to Cite
Ivanchykou, A. E., KiselA. М., MedvedevaА. V., & Plebanovich, B. I. (2008). Methods for removing defects arising during wet etching of polycrystalline silicon surface. Technology and Design in Electronic Equipment, (1), 42-47. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.1.42
Issue
No. 1 (2008): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2008 Ivanchykou A. E., Kisel A. M., Medvedeva A. B., Plebanovich B. I.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.