Production of semi‑insulating silicon for high‑voltage devices

Abstract

The influence of deposition conditions on the nucleation process, structure, and electrophysical properties of oxygen‑doped polycrystalline silicon (ODPS) films has been investigated. At an oxygen content of 2.5–22.0 at.%, ODPS exhibits a quasi‑crystalline structure. The density of ODPS across the entire studied range was found to be 2.2–2.3 g/cm³. An explanation of the obtained results is proposed based on a multi‑path deposition process in the SiH₄–N₂O system. The results have been applied to optimize the manufacturing processes of power electronics devices.