Spectral photoresponse of Ni–n-GaAs surface‑barrier structures

  • D. Melebayew Magtymguly Turkmenistan State University, Ashgabat, Turkmenistan
  • G. D. Melebayewa Magtymguly Turkmenistan State University, Ashgabat, Turkmenistan
  • Yu. V. Rud Ioffe Physical‑Technical Institute, Saint Petersburg, Russia
  • V. Yu. Rud Peter the Great St. Petersburg Polytechnic University, Russia
Keywords: metal–semiconductor, photoresponse, short‑circuit photocurrent, Schottky barrier height, Fowler region of the spectrum

Abstract

The results of a study of the photoresponse spectra of fabricated Ni–n-GaAs structures are presented in the photon energy range h=0.9–2.3 eV under illumination from the semitransparent nickel layer side. For the first time, it has been experimentally established that photons with energies of h=0.9–1.25 eV do not generate excited electrons in the Ni layer, and electron emission from Ni into GaAs does not occur. The potential of Ni–n-GaAs photoresponsive structures for use in solar cell development is demonstrated.

Published
2008-02-28
How to Cite
Melebayew, D., Melebayewa, G. D., Rud, Y. V., & Rud, V. Y. (2008). Spectral photoresponse of Ni–n-GaAs surface‑barrier structures. Technology and Design in Electronic Equipment, (1), 31-34. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2008.1.31
Issue
No. 1 (2008): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2008 Melebayew D., Melebayewa G. D., Rud Yu. V., Rud V. Yu.

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This work is licensed under a Creative Commons Attribution 4.0 International License.