Directed crystallization of silicide films on silicon substrate

  • I. V. Belousov Taras Shevchenko National University of Kyiv, Ukraine
Keywords: self-organized structures, lateral growth, local nucleation, silicide phase, integrated circuit

Abstract

The processes of local nucleation and subsequent directed lateral crystallization of cobalt silicide phase on the surface of monocrystalline silicon have been investigated. The possibilities of creating self-organized submicron and nanoscale elements of silicon integrated circuits are considered.

Published
2007-10-28
How to Cite
Belousov, I. V. (2007). Directed crystallization of silicide films on silicon substrate. Technology and Design in Electronic Equipment, (5), 54-57. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.5.54
Issue
No. 5 (2007): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2007 Belousov I. V.

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