Comparative analysis of silicon readout circuit technologies for IR photodiodes

  • V. Р. Reva Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • S. V. Korinetz Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • L. A. Pysarenko Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • S. E. Dukhnin Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • N. A. Barsukova Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
Keywords: readout circuit, direct injection transistor, CCD technology, CMOS technology

Abstract

A comparative analysis of the advantages and disadvantages of two technologies for fabricating readout circuits for infrared photodiodes has been carried out: complementary MOS (CMOS) technology and charge-coupled device (CCD) technology based on n-channel MOS structures. Parameters of experimental samples of integrated readout circuits (IRC) with a 2×64 format, manufactured using these technologies, are presented. The results demonstrate the feasibility of producing IRCs capable of operating at cryogenic temperatures.

Published
2007-10-28
How to Cite
RevaV. Р., Korinetz, S. V., Pysarenko, L. A., Dukhnin, S. E., & Barsukova, N. A. (2007). Comparative analysis of silicon readout circuit technologies for IR photodiodes. Technology and Design in Electronic Equipment, (5), 46-49. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.5.46
Issue
No. 5 (2007): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2007 Reva V. Р., Korinetz S. V., Pysarenko L. A., Dukhnin S. E., Barsukova N. A.

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This work is licensed under a Creative Commons Attribution 4.0 International License.