Structure Te–CdTe with the property of electronic switching with memory

  • А. Baidullaeva V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • V. V. Borshch V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • V. P. Veleschuk V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • O. I. Vlasenko V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • B. K. Dauletmuratov V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • S. N. Levytskyi V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • P. E. Mozol' V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
Keywords: CdTe, tellurium film, memory switching element

Abstract

The formation of a tellurium film on the surface of a CdTe crystal under ruby laser pulse irradiation has been investigated. A method for fabricating a Te–CdTe structure with electronic switching and memory properties is also presented.

Published
2007-10-28
How to Cite
BaidullaevaА., Borshch, V. V., Veleschuk, V. P., Vlasenko, O. I., Dauletmuratov, B. K., Levytskyi, S. N., & Mozol’, P. E. (2007). Structure Te–CdTe with the property of electronic switching with memory. Technology and Design in Electronic Equipment, (5), 40-43. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.5.40
Issue
No. 5 (2007): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2007 Baidullaeva A., Borshch V. V., Veleschuk V. P., Vlasenko O. I., Dauletmuratov B. K., Levytskyi S. N., Mozol' P. E.

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This work is licensed under a Creative Commons Attribution 4.0 International License.