Thin-film elements of silicon Schottky diodes for high-temperature micro-packaging

  • V. V. Baranov Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
  • Ya. A. Solovyev Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
  • G. V. Koshkarov Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
Keywords: Schottky barriers, high-temperature micro-packaging, electrical properties of devices

Abstract

The design and technological features of silicon Schottky diodes assembled in glass packages, as well as their electrical properties, are discussed. These devices require thermal stability of the chips up to 650 °C. It is shown that a V/n-Si Schottky barrier with a height of 0.654 V meets these technological requirements. The presence of vanadium disilicide in the transition layer, formed during the micro-packaging process, has been established. It is also recommended to use a double-layer passivation structure of SiO2/Ta2O5.

Published
2007-10-28
How to Cite
Baranov, V. V., Solovyev, Y. A., & Koshkarov, G. V. (2007). Thin-film elements of silicon Schottky diodes for high-temperature micro-packaging. Technology and Design in Electronic Equipment, (5), 20-21. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.5.20
Issue
No. 5 (2007): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2007 Baranov V. V., Solovyev Ya. A., Koshkarov G. V.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.