Automated deep-level spectrometer for the study of semiconductor structures

  • Yu. V. Boiko Taras Shevchenko National University of Kyiv, Ukraine
  • G. V. Kuznetsov Taras Shevchenko National University of Kyiv, Ukraine
  • S. М. Savitsky Taras Shevchenko National University of Kyiv, Ukraine
  • O. V. Tretyak Taras Shevchenko National University of Kyiv, Ukraine
Keywords: relaxation spectrometer, deep levels, impurity and defect centers

Abstract

An automated spectrometer for investigating the parameters of impurity and defect centers in semiconductors and semiconductor structures using deep-level transient spectroscopy is described. A developed software package for control and data processing enables automation of measurement procedures and increases the accuracy of the obtained results.

Published
2007-06-29
How to Cite
Boiko, Y. V., Kuznetsov, G. V., SavitskyS. М., & Tretyak, O. V. (2007). Automated deep-level spectrometer for the study of semiconductor structures. Technology and Design in Electronic Equipment, (3), 59-61. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.3.59
Issue
No. 3 (2007): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2007 Boiko Yu. V., Kuznetsov G. V., Savitsky S. М., Tretyak O. V.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.