New possibilities of the photoelectric method for determining barrier height in Au–n-GaAs structures

Abstract

Two-sided photosensitive Au–n–GaAs structures fabricated by a chemical method have been investigated. For the first time, it was found that illumination from the GaAs side increases photosensitivity in the Fowler region of the spectrum by approximately an order of magnitude. An improved variant of the photoelectric method for determining the Schottky barrier height is proposed, providing high accuracy and reliability. This makes it possible to evaluate the quality of metal–semiconductor and metal–insulator–semiconductor interfaces. The method can be applied in the development of new semiconductor electronic devices.