Properties of epitaxial GaAs layers doped with rare earth elements

Abstract

An analysis has been carried out of the properties of epitaxial GaAs layers obtained from gallium melts doped with rare‑earth elements (REEs). It has been established that each REE corresponds to a certain critical concentration in the melt, above which an inversion of the conductivity type of the epitaxial layers is observed. The most suitable REEs for obtaining epitaxial GaAs layers with high electron mobility (27,000–45,000 cm²/(V·s), at 77 K), low concentration of intrinsic defects, and excellent surface morphology are Sc, Gd, and Yb.