Fabrication of surface barrier structures based on quaternary A4B6 solid solutions

  • A. I. Tkachuk Kirovohrad State Pedagogical University named after Volodymyr Vynnychenko, Ukraine
  • O. N. Tsarenko Kirovohrad State Pedagogical University named after Volodymyr Vynnychenko, Ukraine
  • S. I. Raybets Kirovohrad State Pedagogical University named after Volodymyr Vynnychenko, Ukraine
  • I. Yu. Tkachuk Kirovohrad State Pedagogical University named after Volodymyr Vynnychenko, Ukraine
  • Yu. G. Kovalyov Kirovohrad State Pedagogical University named after Volodymyr Vynnychenko, Ukraine
Keywords: liquid‑phase epitaxy, surface‑barrier structures, photovoltaic sensor

Abstract

Surface‑barrier structures of the type Pb/δ-layer/р-Pb0,87Sn0,13Te0,96Se0,04/р+-Pb0,8Sn0,2Te/Au. were fabricated using liquid‑phase epitaxy and thermal vacuum deposition. At a measurement temperature of 170 K, with a peak wavelength of 8.2 μm and a cutoff wavelength of 8.5 μm, they exhibited a differential resistance–area product at zero bias R0A = 0.39…0.92 Ω·cm², peak quantum efficiency of 0.33…0.42, and specific detectivity of (0.76…1.68)·1010 cm·Hz0.5/W.

Published
2007-02-28
How to Cite
Tkachuk, A. I., Tsarenko, O. N., Raybets, S. I., Tkachuk, I. Y., & Kovalyov, Y. G. (2007). Fabrication of surface barrier structures based on quaternary A4B6 solid solutions. Technology and Design in Electronic Equipment, (1), 42-44. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.1.42
Issue
No. 1 (2007): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2007 Tkachuk A. I., Tsarenko O. N., Raybets S. I., Tkachuk I. Yu., Kovalyov Yu. G.

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