Influence of direct current pulses on the lifetime of minority charge carriers in a p+–n diode

  • V. V. Kushnirenko Taras Shevchenko National University of Kyiv, Ukraine
  • G. K. Ninidze Taras Shevchenko National University of Kyiv, Ukraine
  • S. P. Pavljuk Taras Shevchenko National University of Kyiv, Ukraine
  • S. M. Savitsky Taras Shevchenko National University of Kyiv, Ukraine
  • O. V. Tretyak Taras Shevchenko National University of Kyiv, Ukraine
Keywords: minority carrier lifetime, recombination centers, semiconductor diode, current pulse heating, p –n junction

Abstract

A method is proposed for controlled modification of the lifetime of minority charge carriers in the base of a semiconductor diode crystal under the action of a short modifying current pulse, which leads to sharp non‑uniform heating of the crystal. Studies have been carried out on changes in the characteristics of industrial diode crystals KD105–KD209. The energy parameters of newly introduced recombination centers have been determined.

Published
2007-02-28
How to Cite
Kushnirenko, V. V., Ninidze, G. K., Pavljuk, S. P., Savitsky, S. M., & Tretyak, O. V. (2007). Influence of direct current pulses on the lifetime of minority charge carriers in a p+–n diode. Technology and Design in Electronic Equipment, (1), 32-35. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2007.1.32
Issue
No. 1 (2007): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2007 Kushnirenko V. V., Ninidze G. K., Pavljuk S. P., Savitsky S. M., Tretyak O. V.

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This work is licensed under a Creative Commons Attribution 4.0 International License.