Nanostructured ZnO films for microelectronics and optical devices

  • A. F. Belyanin Central Research Technological Institute “Technomash-VOS”, Moscow, Russia
  • V. A. Krivchenko Central Research Technological Institute “Technomash-VOS”, Moscow, Russia
  • D. V. Lopaev Central Research Technological Institute “Technomash-VOS”, Moscow, Russia
  • L. V. Pavlushkin Skobeltsyn Institute of Nuclear Physics, Moscow, Russia
  • P. V. Paschenko Skobeltsyn Institute of Nuclear Physics, Moscow, Russia
  • V. G. Pirogov Skobeltsyn Institute of Nuclear Physics, Moscow, Russia
  • S. N. Polyakov Skobeltsyn Institute of Nuclear Physics, Moscow, Russia
  • N. V. Suetin Mari State Technical University, Yoshkar-Ola, Russia
  • N. I. Sushentsov Mari State Technical University, Yoshkar-Ola, Russia
  • N. V. Suetin Mari State Technical University, Yoshkar-Ola, Russia
Keywords: ZnO films, magnetron sputtering, electronics, optics

Abstract

ZnO films were obtained by RF magnetron sputtering. An additional magnetic field was applied using a magnetic system placed behind the substrate holder. The influence of process parameters on the structure and functional properties of the films was established. ZnO films were employed in the development of surface acoustic wave filters and ultraviolet mirrors

Published
2006-02-28
How to Cite
Belyanin, A. F., Krivchenko, V. A., Lopaev, D. V., Pavlushkin, L. V., Paschenko, P. V., Pirogov, V. G., Polyakov, S. N., Suetin, N. V., Sushentsov, N. I., & Suetin, N. V. (2006). Nanostructured ZnO films for microelectronics and optical devices. Technology and Design in Electronic Equipment, (6), 48-55. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.6.48
Issue
No. 6 (2006): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2006 A. F. Belyanin, V. A. Krivchenko, D. V. Lopaev, L. V. Pavlushkin, P. V. Paschenko, V. G. Pirogov, S. N. Polyakov, N. V. Suetin, N. I. Sushentsov

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