Semiconductor inductors for the microwave range

  • N. А. Filynyuk Vinnytsya National Technical University, Ukraine
  • А. М. Kuzemko Vinnytsya National Technical University, Ukraine
  • Salech M. M. Jourban Vinnytsya National Technical University, Ukraine
Keywords: field-effect transistor, negatron, active inductor, microwave, integrated circuit

Abstract

Schemes of combined semiconductor inductors suitable for implementation as hybrid or semiconductor microcircuits have been developed. The use of dual-gate Schottky transistors makes it possible to realize semiconductor inductors with values of several nanohenries at frequencies of 18–20 GHz, with a temperature instability coefficient of 0.07 %·°C–1 in the temperature range of 0–40 °C. Unlike thin-film inductors, they exhibit higher inductance and quality factor, which are independent of geometric dimensions.

Published
2006-10-30
How to Cite
FilynyukN. А., KuzemkoА. М., & Jourban, S. M. M. (2006). Semiconductor inductors for the microwave range. Technology and Design in Electronic Equipment, (5), 9-13. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.5.09
Issue
No. 5 (2006): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2006 Filynyuk N. А., Kuzemko А. М., Salech M. M. Jourban

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