Evaluation of potential redistribution in a three-barrier structure

  • A. V. Karimov Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • D. M. Yodgorova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • Sh. Sh. Boltaeva Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
  • L. Kh. Zoirova Physical-Тechnical Institute NGO “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
Keywords: three-barrier structure, photosensitivity, current transport, inflection point, exponent

Abstract

An experimental–computational method is proposed for determining the voltage drops across each junction of a three-barrier structure. The current–voltage characteristics of the blocking junctions are analyzed, and the asymmetries observed in experiments with the three-barrier homo m1–рGaAs–nGaAs–m2 structure are explained. The results can be used to evaluate photosensitivity, frequency properties, and to identify current transport mechanisms under external influences

Published
2006-08-31
How to Cite
Karimov, A. V., Yodgorova, D. M., Boltaeva, S. S., & Zoirova, L. K. (2006). Evaluation of potential redistribution in a three-barrier structure. Technology and Design in Electronic Equipment, (4), 30-35. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.4.30
Issue
No. 4 (2006): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2006 Karimov A. V., Yodgorova D. M., Boltaeva Sh. Sh., Zoirova L. Kh.

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