CdZnTe-based sensors for X-ray radiation measurements

  • A. V. Rybka National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • A. А. Zakharchenko National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • L. N. Davydov National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • I. N. Shlyakhov National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • A. A. Blinkin National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
  • K. V. Kutnyi National Science Center «Kharkiv Institute of Physics and Technology», NAS of Ukraine, Ukraine
Keywords: X-ray radiation, semiconductor sensors, CdTe, CdZnTe, dosimetry, spectrometry, detectors

Abstract

Sensors based on the wide-bandgap semiconductor compound CdZnTe have been investigated. The advantages of such sensors are demonstrated: a wide range of photon flux and energy measurement, high detection efficiency, and satisfactory energy resolution without the need for deep cooling. Devices based on CdZnTe sensors are described, including a dosimeter for dose-rate monitoring and an X-ray spectrometer. The developed detection modules reliably register X-ray radiation starting from energies of 5 keV.

Published
2006-04-30
How to Cite
Rybka, A. V., ZakharchenkoA. А., Davydov, L. N., Shlyakhov, I. N., Blinkin, A. A., & Kutnyi, K. V. (2006). CdZnTe-based sensors for X-ray radiation measurements. Technology and Design in Electronic Equipment, (2), 23-26. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.2.23