Gas-sensitive structures "cobalt silicide – porous silicon – silicon"

  • I. V. Belousov Taras Shevchenko National University of Kyiv, Ukraine
  • E. V. Buzaneva Taras Shevchenko National University of Kyiv, Ukraine
  • G. V. Kuznetsov Taras Shevchenko National University of Kyiv, Ukraine
Keywords: silicide phase, porous silicon, multilayer structure, gas sensor

Abstract

The phenomena of local nucleation and subsequent lateral crystallization of the CoSi2 silicide phase on the surface of porous silicon have been studied. A technology for forming a metallic electrode grid based on cobalt silicide for gas-sensitive surface-barrier silicon structures is proposed. Multilayer film structures "cobalt silicide – porous silicon – silicon" exhibit sensor properties and can be used as elements of gas sensors.

Published
2006-02-28
How to Cite
Belousov, I. V., Buzaneva, E. V., & Kuznetsov, G. V. (2006). Gas-sensitive structures "cobalt silicide – porous silicon – silicon". Technology and Design in Electronic Equipment, (1), 34-36. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.1.34
Issue
No. 1 (2006): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2006 Belousov I. V., Buzaneva E. V., Kuznetsov G. V.

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This work is licensed under a Creative Commons Attribution 4.0 International License.