Plasma-chemical etching of gallium nitride epitaxial structures

  • A. G. Borisenko Institute for Nuclear Research of NASU, Kyiv, Ukraine
  • B. P. Polozov Institute for Nuclear Research of NASU, Kyiv, Ukraine
  • O. A. Fedorovich Institute for Nuclear Research of NASU, Kyiv, Ukraine
  • M. S. Boltovets Research Institute «Orion», Kyiv, Ukraine
  • V. N. Ivanov Research Institute «Orion», Kyiv, Ukraine
  • Yu. N. Sveschnikov "Elma malachite", Moscow, Russia
Keywords: epitaxial layers, gallium nitride, plasma-chemical etching, plasma-chemical reactor

Abstract


The results of plasma-chemical etching of gallium nitride epitaxial structures on sapphire substrates are presented. Etching was carried out in a plasma-chemical reactor with closed electron drift. The working gases were CCl₄ and its mixtures with O₂ or Ar. A nickel mask with a thickness of 0.5–0.8 μm was used. The average etching rate of complex epitaxial structures with gallium nitride, taking into account sapphire etching, was ≤540 Å/min. High-temperature Hall sensors for magnetic field measurements were fabricated.

Published
2005-12-30
How to Cite
Borisenko, A. G., Polozov, B. P., Fedorovich, O. A., Boltovets, M. S., Ivanov, V. N., & Sveschnikov, Y. N. (2005). Plasma-chemical etching of gallium nitride epitaxial structures. Technology and Design in Electronic Equipment, (6), 42-46. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.6.42
Issue
No. 6 (2005): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2005 Borisenko A. G., Polozov B. P., Fedorovich O. A., Boltovets M. S., Ivanov V. N., Sveschnikov Yu. N.

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