Microchip lasers with passive Q-switching based on Nd:YAG/Cr⁴⁺:YAG epitaxial structures

  • I. I. Izhnin SPA «Karat», Lviv, Ukraine
  • N. M. Vakiv SPA «Karat», Lviv, Ukraine
  • А. I. Izhnin SPA «Karat», Lviv, Ukraine
  • I. M. Syvorotka SPA «Karat», Lviv, Ukraine
  • S. B. Ubizskii SPA «Karat», Lviv, Ukraine
  • I. M. Syvorotka SPA «Karat», Lviv, Ukraine
Keywords: microchip laser, passive Q-switching, saturable absorber, Nd:YAG/Cr⁴⁺:YAG epitaxial structure

Abstract

The features of developing microchip lasers with passive Q-switching are considered. The active medium of the laser is an epitaxial layer of the saturable absorber Cr⁴⁺:YAG grown by liquid-phase epitaxy on an Nd:YAG substrate. Laser mirrors were deposited by electron-beam evaporation. Pumping was carried out with a continuous-wave semiconductor laser (808 nm). The obtained laser parameters are: pulse duration of 1.3 ns, pulse repetition rate of 5.5 kHz, and peak pulse power of 1.2 kW.

Published
2005-12-30
How to Cite
Izhnin, I. I., Vakiv, N. M., IzhninА. I., Syvorotka, I. M., Ubizskii, S. B., & Syvorotka, I. M. (2005). Microchip lasers with passive Q-switching based on Nd:YAG/Cr⁴⁺:YAG epitaxial structures. Technology and Design in Electronic Equipment, (6), 30-32. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.6.30
Issue
No. 6 (2005): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2005 Izhnin I. I., Vakiv N. M., Izhnin A. I., Syvorotka I. M., Ubizskii S. B.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.