Electrochemical profiling setup for diagnosing GaAs epitaxial structures

  • N. M. Vakiv SPA «Karat», Lviv, Ukraine
  • I. R. Zaverbniy Lviv Polytechnic National University, Ukraine
  • D. M. Zayachuk SPA «Karat», Lviv, Ukraine
  • S. I. Krukovsky SPA «Karat», Lviv, Ukraine
  • I. O. Mrykhin SPA «Karat», Lviv, Ukraine
Keywords: electrochemical profiling, electrolyte–semiconductor barrier, GaAs

Abstract

An electrochemical profiling setup for semiconductor structures has been developed, in which the concentration of free charge carriers is determined from the capacitance–voltage characteristics of the electrolyte–semiconductor barrier, while scanning through the thickness of epitaxial layers is performed by photoelectrochemical etching of the semiconductor. Using GaAs epitaxial structures as an example, high measurement accuracy of carrier concentration to a depth of at least 10 μm has been demonstrated.

Published
2005-06-30
How to Cite
Vakiv, N. M., Zaverbniy, I. R., Zayachuk, D. M., Krukovsky, S. I., & Mrykhin, I. O. (2005). Electrochemical profiling setup for diagnosing GaAs epitaxial structures. Technology and Design in Electronic Equipment, (3), 40-45. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.40
Issue
No. 3 (2005): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2005 Vakiv N. M., Zaverbniy I. R., Zayachuk D. M., Krukovsky S. I., Mrykhin I. O.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.