Influence of ion implantation and photon annealing regimes on the parameters of implanted n-GaAs:Si layers

  • A. Yu. Bonchyk Ya. S. Pidstrygach Institute of Problems of Microelectronics and Design of NASU, Lviv, Ukraine
  • I. I. Izhnin SPA «Karat», Lviv, Ukraine
  • S. G. Kyjak Ya. S. Pidstrygach Institute of Problems of Microelectronics and Design of NASU, Lviv, Ukraine
  • G. V. Savytsky Ya. S. Pidstrygach Institute of Problems of Microelectronics and Design of NASU, Lviv, Ukraine
Keywords: GaAs, ion implantation, photon annealing, carrier concentration, dopant activation

Abstract

The paper presents the results of studies on the influence of ion implantation regimes and pulsed incoherent photon annealing on the parameters of Si-implanted n-GaAs layers grown on semi-insulating GaAs substrates. The obtained layers are characterized by the following parameters: thickness of 0.1–0.3 μm, electron concentration of 1017–1018 cm−3, and mobility of 2000–3000 cm2/(V·s).

Published
2005-06-30
How to Cite
Bonchyk, A. Y., Izhnin, I. I., Kyjak, S. G., & Savytsky, G. V. (2005). Influence of ion implantation and photon annealing regimes on the parameters of implanted n-GaAs:Si layers. Technology and Design in Electronic Equipment, (3), 3-4. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.3.03
Issue
No. 3 (2005): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2005 Bonchyk A. Yu., Izhnin I. I., Kyjak S. G., Savytsky G. V.

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