Preparation and properties of porous silicon carbide

  • L. A. Svetlichnaya Taganrog State University of Radio Engineering, Russia
  • N. N. Moskovchenko Taganrog State University of Radio Engineering, Russia
  • P. V. Serba Taganrog State University of Radio Engineering, Russia
Keywords: porous silicon carbide, electrochemical etching, morphology of porous layer, pore size, epitaxial SiC layer

Abstract

The methods of obtaining porous silicon carbide, its properties, and the influence of electrolyte composition, etching time, and current density on the morphology of the porous layer are discussed, as well as the dependence of pore structure on substrate doping. The results are compared with data on porous silicon.

Published
2005-02-28
How to Cite
Svetlichnaya, L. A., Moskovchenko, N. N., & Serba, P. V. (2005). Preparation and properties of porous silicon carbide. Technology and Design in Electronic Equipment, (1), 53-57. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2005.1.53
Issue
No. 1 (2005): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2005 Svetlichnaya L. A., Moskovchenko N. N., Serba P. V.

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