CMOS IC of a 16-bit microprocessor resistant to γ-radiation

  • V. G. Verbitsky Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • V. I. Zolotarevsky Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • L. I. Samotovka Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • B. A. Balay Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • A. F. Voshchinkin Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • V. L. Koba Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • E. S. Tovmach Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
  • A. A. Yavetsky Institute of Microdevices of NAS of Ukraine, Kyiv, Ukraine
Keywords: CMOS IC, n- and p-channel MOS transistors, radiation resistance, γ-radiation, microprocessor, electrical parameters

Abstract

The results of design and testing of the CMOS IC 1834VM86 16-bit microprocessor (a functional analogue of the n-channel IC 1810VM86) under exposure to accumulated γ-radiation doses up to 10⁶ rad are presented. The structural features of the elements and the technological process of manufacturing radiation-resistant ICs are discussed. Values of the main electrical parameters of the IC and threshold voltages of n-channel transistors before and after radiation-thermal treatments during crystal fabrication are provided.

Published
2004-12-30
How to Cite
Verbitsky, V. G., Zolotarevsky, V. I., Samotovka, L. I., Balay, B. A., Voshchinkin, A. F., Koba, V. L., Tovmach, E. S., & Yavetsky, A. A. (2004). CMOS IC of a 16-bit microprocessor resistant to γ-radiation. Technology and Design in Electronic Equipment, (6), 40-44. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.6.40