Study of MOSFET transistors in various hermetic surface-mount packages

Abstract

The assembly processes of MOSFET transistors in the SMD-1 metal-ceramic package were investigated in comparison with the SMD-220 metal-plastic package. Results regarding electrical and thermal parameters are presented. It is shown that the “p-n junction–package” thermal resistance is higher for SMD-1; however, the thermal conductivity consistency of the SMD-1 package components allows for the manufacture of devices with minimal internal stresses and ensures their high hermeticity and reliability under conditions of temperature fluctuations exceeding 300°C.