Formation of columnar leads for GaAs pixel detectors

  • Z. V. Berishvili Tbilisi State University, Georgia
  • L. V. Jangidze Tbilisi State University, Georgia
  • G. A. Skhiladze Tbilisi State University, Georgia
  • R. G. Melkadze Tbilisi State University, Georgia
  • T. M. Lezhneva Tbilisi State University, Georgia
  • G. G. Peradze Tbilisi State University, Georgia
Keywords: hybrid detector, flip-chip technology, columnar lead, gallium arsenide

Abstract

In the fabrication of hybrid ionizing radiation pixel detectors, the sensor array is connected to the readout device using columnar interconnects via flip-chip technology. A process for forming Pb/Sn and In columnar interconnects on GaAs sensor arrays has been developed and investigated. A TiW/Ag system deposited by magnetron sputtering is proposed as the under-column metallization. The process conditions, sequence of operations, and parameters of the resulting columns are presented.

Published
2004-08-30
How to Cite
Berishvili, Z. V., Jangidze, L. V., Skhiladze, G. A., Melkadze, R. G., Lezhneva, T. M., & Peradze, G. G. (2004). Formation of columnar leads for GaAs pixel detectors. Technology and Design in Electronic Equipment, (4), 43-45. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.4.43
Issue
No. 4 (2004): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2004 Z. V. Berishvili, L. V. Jangidze, G. A. Skhiladze, R. G. Melkadze, T. M. Lezhneva, G. G. Peradze

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This work is licensed under a Creative Commons Attribution 4.0 International License.