Frequency-output pressure transducer based on single-junction strain transistors

  • G. G. Babichev Research Institute «Helium», Vinnytsia, Ukraine
  • G. I. Gavrilyuk Research Institute «Helium», Vinnytsia, Ukraine
  • E. A. Zinchenko V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • S. I. Kozlovsky V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • V. A. Romanov V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • N. N. Sharan Research Institute «Helium», Vinnytsia, Ukraine
Keywords: pressure transducer, strain transistor, strain sensitivity, control p-n junction, noise immunity, measurement accuracy, output signal, silicon

Abstract

The operating principle of single-junction strain transistors is discussed. It is shown that the strain sensitivity of a single-junction transistor with a controlled p-n junction is an order of magnitude higher than that of a simple single-junction transistor. It is concluded that the proposed pressure transducer with a frequency output is of practical interest for the creation of devices with increased requirements for noise immunity and measurement accuracy of the information signal.

Published
2004-06-30
How to Cite
Babichev, G. G., Gavrilyuk, G. I., Zinchenko, E. A., Kozlovsky, S. I., Romanov, V. A., & Sharan, N. N. (2004). Frequency-output pressure transducer based on single-junction strain transistors. Technology and Design in Electronic Equipment, (3), 48-51. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2004.3.48
Issue
No. 3 (2004): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2004 Babichev G. G., Gavrilyuk G. I., Zinchenko E. A., Kozlovsky S. I., Romanov V. A., Sharan N. N.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.