Acoustically stimulated reduction of the annealing temperature for radiation defects in Ge crystals

Abstract

ultrasonic treatment, isochronous annealing, neutron-doped germanium, radiation defects

A method is proposed for annealing semiconductors under ultrasonic irradiation (f = 5–10 MHz, W < 10⁴ W/m²). Isochronous annealing of radiation defects was performed on model samples of neutron-doped Ge (Ф_n ≈ 10¹⁵ cm⁻²) (Т_an = 90–460 °C, t = 30 min, ΔТ_an=30°С). Comparative results of measurements of electrophysical parameters (using the Hall method in the range T = 77–300 K) are presented. It was found that the mechanism of ultrasonic interaction boils down to the acceleration of point defect diffusion due to a decrease in activation energy and an increase in the concentration of non-equilibrium defects.