Methods of removing polymer contamination caused by plasma-chemical etching

  • A. E. Ivanchikov «Integral» Scientific Production Association, Minsk, Belarus
  • A. M. Kisel «Integral» Scientific Production Association, Minsk, Belarus
  • A. B. Medvedeva «Integral» Scientific Production Association, Minsk, Belarus
  • V. I. Plebanovich «Integral» Scientific Production Association, Minsk, Belarus
  • V. N. Ponomar «Integral» Scientific Production Association, Minsk, Belarus
  • V. E. Shikulo «Integral» Scientific Production Association, Minsk, Belarus
Keywords: plasma-chemical etching, polymer contamination removal, polymer residues, PRX chemical solutions, thermal removal method, contact reflow operation, silicon dioxide thickness variation

Abstract

The formation of small-sized contact windows by plasma-chemical etching and the main factors of polymer residue formation after etching are considered. The composition of polymer residues and the mechanism of their removal by chemical methods using PRX solutions have been studied. An indirect evaluation (based on the variation in silicon dioxide thickness) of the thermal method of polymer residue removal, implemented during the “contact reflow” operation, has been carried out.

Published
2003-10-31
How to Cite
Ivanchikov, A. E., Kisel, A. M., Medvedeva, A. B., Plebanovich, V. I., Ponomar, V. N., & Shikulo, V. E. (2003). Methods of removing polymer contamination caused by plasma-chemical etching. Technology and Design in Electronic Equipment, (5), 46-50. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.5.46
Issue
No. 5 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 Ivanchikov A. E., Kisel A. M., Medvedeva A. B., Plebanovich V. I., Ponomar V. N., Shikulo V. E.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.