Prospects for the development and application of microelectronic negatronics

  • F. D. Kasimov National Aerospace Agency, Baku, Azerbaijan
Keywords: negative resistance, microelectronic negatronics, switching, high-resistance and low-resistance states, galvanomagnetorecombination effect, semiconductor inductance

Abstract

It is shown that the simultaneous growth of local films of polycrystalline and monocrystalline silicon formed the basis for the development of microelectronic negatronics, a new branch of functional electronics. The integration of sensitive elements and negatron analogs within a single crystal makes it possible to create microelectronic converters of nonelectrical quantities with signal transmission over distance. The paper presents a view on the prospects for using microelectronic negatronics, including bionegatronics.

Published
2003-10-31
How to Cite
Kasimov, F. D. (2003). Prospects for the development and application of microelectronic negatronics. Technology and Design in Electronic Equipment, (5), 5-8. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.5.05