New generation of microelectronic silicon temperature sensors

  • Yu. M. Shvarts V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • M. M. Shvarts V. Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, Ukraine
  • A. N. Ivashchenko Saturn-Micro Subsidiary, Kyiv, Ukraine
  • V. I. Bosyi SPE «Saturn», Kyiv, Ukraine
  • A. G. Maksimenko Kvazar-IS Subsidiary, Kyiv, Ukraine
  • S. V. Sapon Kvazar-IS Subsidiary, Kyiv, Ukraine
Keywords: silicon diode temperature sensors, mechanical shock and vibration resistance, climatic and radiation resistance

Abstract

Silicon diode temperature sensors of a new generation are presented. The developed sensors are characterized by high measurement accuracy over a wide temperature range, high interchangeability, low power consumption, small mass, and the ability to operate effectively under combined exposure to low and high temperatures, thermal cycles, mechanical shocks and vibrations, climatic factors, high radiation, and more.

Published
2003-06-30
How to Cite
Shvarts, Y. M., Shvarts, M. M., Ivashchenko, A. N., Bosyi, V. I., Maksimenko, A. G., & Sapon, S. V. (2003). New generation of microelectronic silicon temperature sensors. Technology and Design in Electronic Equipment, (3), 59-60. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.3.59
Issue
No. 3 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 Shvarts Yu. M., Shvarts M. M., Ivashchenko A. N., Bosyi V. I., Maksimenko A. G., Sapon S. V.

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.