High-power microwave transistors based on wide-band semiconductors

Abstract

A review of recent published results on the development of high-power microwave transistors based on AlGaN/GaN heterostructures is presented. The design and manufacturing technology of these transistors are discussed, along with studies of substrate influence on device characteristics. It is shown that HEMTs based on AlGaN/GaN heterostructures can provide a 5–10-fold increase in specific power (≥10 W/mm) with efficiency up to 60%, higher operating temperatures, and improved reliability compared to GaAs-based devices.