Functional capabilities of photodetectors based on low‑resistance semiconductor films

  • A. A. Klyukanov Technical University, Chișinău, Moldova
  • E. A. Senokosov Technical University, Chișinău, Moldova
  • D. E. Boginsky Technical University, Chișinău, Moldova
  • V. V. Sorochan Technical University, Chișinău, Moldova
  • L. V. Feshchenko Taras Shevchenko Transnistria State University, Tiraspol, Republic of Moldova
Keywords: photodetectors, low‑resistance semiconductor films, potential distribution, local illumination, position‑sensitive devices

Abstract

Theoretical calculations of the distribution function of dark and light potentials over the surface of a conductive semiconductor disk (film) with four square‑arranged edge contacts are presented. An analytical relationship between the output voltage of such a photodetector and the current magnitude, light intensity, and coordinates of local illumination has been established. The results confirm the possibility of developing a new class of position‑sensitive devices based on low‑resistance photoconductors.

Published
2003-02-28
How to Cite
Klyukanov, A. A., Senokosov, E. A., Boginsky, D. E., Sorochan, V. V., & Feshchenko, L. V. (2003). Functional capabilities of photodetectors based on low‑resistance semiconductor films. Technology and Design in Electronic Equipment, (1), 49-51. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.1.49
Issue
No. 1 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 A. A. Klyukanov, E. A. Senokosov, D. E. Boginsky, V. V. Sorochan, L. V. Feshchenko

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