Use of InSb quantum dots in GaSb‑based thermophotovoltaic converters

  • E. V. Andronova Kherson National Technical University, Ukraine
  • E. A. Baganov Kherson National Technical University, Ukraine
  • A. Yu. Dalechin Kherson National Technical University, Ukraine
  • A. Yu. Karmanny Kherson National Technical University, Ukraine
Keywords: InSb quantum dots, thermophotovoltaic converters, GaSb, spectral range, photosensitivity, efficiency, optical transitions, doping

Abstract

The influence of radiation absorption in InSb quantum dots (QDs) on the efficiency of GaSb‑based thermophotovoltaic (TPV) elements has been investigated. It is shown that the introduction of QDs significantly expands the spectral range of photosensitivity and increases the efficiency of TPV elements. Analysis of optical transitions in InSb QDs, as well as the dependence of the thermodynamic efficiency of the TPV element on QD size, made it possible to determine the optimal conductivity type, doping level of the matrix material, and select the optimal QD diameter.

Published
2003-02-28
How to Cite
Andronova, E. V., Baganov, E. A., Dalechin, A. Y., & Karmanny, A. Y. (2003). Use of InSb quantum dots in GaSb‑based thermophotovoltaic converters. Technology and Design in Electronic Equipment, (1), 46-48. Retrieved from https://www.tkea.com.ua/index.php/journal/article/view/TKEA2003.1.46
Issue
No. 1 (2003): Tekhnologiya i konstruirovanie v elektronnoi apparature
Section
Articles

Copyright (c) 2003 E. V. Andronova, E. A. Baganov, A. Yu. Dalechin, A. Yu. Karmanny

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